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Accession number: 20105013487363
Title: Study on the preparation of a high diffraction efficiency dammann grating with subwavelength structure
Authors: Leng, Yanbing1 ; Dong, Lianhe1 ; Sun, Yanjun1
Author affiliation: 1 Changchun University of Science and Technology, Changchun 130022, China
Corresponding author: Leng, Y.
Source title: Proceedings of SPIE - The International Society for Optical Engineering
Abbreviated source title: Proc SPIE Int Soc Opt Eng
Volume: 7655
Issue: PART 1
Monograph title: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Issue date: 2010
Publication year: 2010
Article number: 765524
Language: English
ISSN: 0277786X
CODEN: PSISDG
ISBN-13: 9780819480859
Document type: Conference article (CA)
Conference name: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Conference date: April 26, 2010 - April 29, 2010
Conference location: Dalian, China
Conference code: 82771
Sponsor: The Chinese Optical Society (COS); CAS, The Institute of Optics and Electronics (IOE); The Society of Photo-Optical Instrumentation Engineers (SPIE)
Publisher: SPIE, P.O. Box 10, Bellingham, WA 98227-0010, United States
Abstract: Based on the couple-wave analysis theory and the genetic algorithm, a high diffraction efficiency dammann grating with subwavelength structure has been designed and prepared. The array number of diffractive spots is 9 and the feature size achieves 0.92μm. The diffraction efficiency of the grating reaches 92%. By using Electron Beam Direct Writing and Reactive Ion Etching, we patterned the subwavelength structure on the silica. The experimental results show that the subwavelength structure with nanometer resolution can be patterned by computer controlled electron beam scanning exposure. In reactive ion etching, the etching rate and the grating line-shape can be affected by radio frequency (RF) power, system pressure and gas flow. When there are pressure of 6 pa and gas flow of 35cm3/min steadily, etching rate increases nonlinearly with RF power and reaches the peak at 350W. While RF power is higher than 350W, etching rate descends with its increasing and surfaces of grating groove become rough and burned deformed easily. When the RF power and gas flow are steadily, etching rate increases with system pressure reaches the peak at 13Pa, then descends. On the contrary, when the RF power and system pressure are steadily, etch rate decreases with the increase of the gas flow. This paper also analyzes the linewidth error in Electron Beam Direct Writing. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Number of references: 5
Main heading: Reactive ion etching
Controlled terms: Computer control systems - Diffraction efficiency - Electron beams - Electron optics - Flow of gases - Manufacture - Silica - Technology - Testing
Uncontrolled terms: Array number - Dammann gratings - Electron beam direct writing - Etch rates - Etching rate - Feature sizes - Gas flows - high diffraction efficiency - Nanometer resolutions - Radio frequency power - Rf-power - Sub-wavelength - Sub-wavelength structures - System pressure - Wave analysis
Classification code: 901 Engineering Profession - 812 Ceramics, Refractories and Glass - 743 Holography - 741 Light, Optics and Optical Devices - 731.1 Control Systems - 932 High Energy Physics; Nuclear Physics; Plasma Physics - 711 Electromagnetic Waves - 631.1.2 Gas Dynamics - 537.1 Heat Treatment Processes - 531 Metallurgy and Metallography - 423.2 Non Mechanical Properties of Building Materials: Test Methods - 701.1 Electricity: Basic Concepts and Phenomena
DOI: 10.1117/12.867091
